s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s = 20v r d s ( on) = 85m @v g s = 4.5v ,i d = 3.6a r d s ( on) = 115m @v g s = 2.5v ,i d = 3.1a 1.gate 2.source 3.drain g s d 2 3 1 a bs olut e max imum r at ings ta = 25 s y m bol rati ng uni t v d s 20 v g s 8 t a= 25 2.8 t a= 70 2.2 i d m 10 t a= 25 1.25 w t a= 70 0.8 t her m al res i s tanc e.j unc ti on- to- a m bi en t * 1 100 * 2 166 t j 150 t s tg - 55 to 150 /w r t h ja p ul s ed dr ai n cur r ent j unc ti on t em per atur e p ar am eter conti nuous dr ai n cur r ent * 1 i d dr ai n- s our c e v ol tage g ate- s our c e v ol tage v a s tor age t em per atur e range p d p ow er di s s i pati on notes : * 2.s ur fac e m ounted on f r4 b oar d. * 1.s ur fac e m ounted on f r4 b oar d, t 5 s ec . 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 n-cha nne l mo s f e t si2 3 0 2 ds-hf ( k i 2 3 0 2 d s - h f) p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 20 v v d s = 20v , v g s = 0v 1 v d s = 20v , v g s = 0v ,t j = 55 10 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s , i d = 250 a 0.62 1.9 v v g s = 4.5v , i d = 3.6a 85 v g s = 2.5v , i d = 3.1a 115 f or w ar d t r ans c onduc tanc e * gfs v d s = 5v ,i d = 3.6a 8 s input capac i tanc e c i ss 300 o utput capac i tanc e c o ss 120 rev er s e t r ans fer capac i tanc e c r ss 80 t otal g ate char ge q g 4 10 g ate- s our c e char ge q g s 0.65 g ate- dr ai n char ge q g d 1.5 t ur n- o n del ay t i m e t d ( o n ) 7 15 t ur n- o n ri s e t i m e t r 55 80 t ur n- o ff del ay t i m e t d ( o f f ) 16 60 t ur n- o ff f al l t i m e t f 10 25 conti nuous s our c e cur r ent ( di ode conduc ti on) i s 1.6 a di ode f or w ar d v ol tage v s d is = 1.6a ,v g s = 0v 0.76 1.2 v z er o g ate v ol tage dr ai n cur r ent i d s s a v d s = 10v ,v g s = 4.5v ,i d = 3.6a nc ns m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e v g s = 4.5v , v d s = 10v , r l = 5.5 ,r g e n = 6 i d = 3.6a v g s = 0v , v d s = 10v , f= 1m hz pf * p ul s e tes t: p w 300us duty c y c l e 2% mar k ing m ar k i ng a 2* f n-cha nne l mo s f e t si2 3 0 2 ds-hf ( k i 2 3 0 2 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 on-resistance vs. drain current s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d 0 2 4 6 8 10 0 1 2 3 4 5 t c = 125 c ?55 c 0, 0.5, 1 v v g s = 5 thru 2.5 v 1.5 v 2 v 0 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 0 50 100 150 0 1 2 3 4 5 0 1 2 3 4 5 6 7 0 0.03 0.06 0.09 0.12 0.15 0 2 4 6 8 10 ga t e c ha r ge ? gate-to-source v oltage (v) q g ? t o ta l ga te cha r g e ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs c r s s c os s c i s s v d s = 10 v i d = 3.6 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v g s = 4.5 v i d = 3.6 a t j ? junction t emperature ( c) (normalized) ? on-resistance ( r ds(on) ) v g s = 2.5 v v g s = 4.5 v 25 c b b b b n-cha nne l mo s f e t si2 3 0 2 ds-hf ( k i 2 3 0 2 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s 0.2 0.4 0.6 0.8 1.0 1.2 power (w) ?0.4 ?0.3 ?0.2 ?0.1 ?0.0 0.1 0.2 ?50 0 50 100 150 0 0.04 0.08 0.12 0.16 0.20 0 2 4 6 8 e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s r e w o p e s l u p e l g n i s e g a t l o v d l o h s e r h t normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) 2 1 0.1 0.01 10 ?4 10 ?3 10 ?2 10 ?1 1 normalized ef fective t ransient thermal impedance 30 ? on-resistance ( r ds(on) ) v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t j ? t emperature ( c) v ariance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 3.6 a i d = 250 a 10 1 10 t j = 25 c t j = 150 c 0.01 0.10 1.00 10.00 t ime (sec) t c = 25 c single pulse 14 12 8 4 0 2 6 10 b b b b n-cha nne l mo s f e t si2 3 0 2 ds-hf ( k i 2 3 0 2 d s - h f)
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